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A
a , lattice constant AAS abrupt junction, absorption absorption coefficient acceptor access time accumulation activation energy active Si layer ADC adhesion adhesion promoter adsorption aerosol cleaning, AFM AII-BVI, II-VI, semiconductors AIII-BV, III-V, semiconductors AIV-BIV, IV-IV, semiconductors ALCVD AlGaAs aligner alignment alignment mark alloyed junction alternative dielectrics aluminum oxide, alumina, Al2O3 aluminum, conductor, Al aluminum, contaminant, Al ambipolar carrier transport ambipolar semiconductor AMLCD ammonia, NH3 ammonium hydroxide, NH4OH amorphous material amorphous Si, a-Si amphoteric dopant analog device analog integrated circuit angstrom, Å anhydrous HF, AHF anisotropic etch anneal anodic oxidation anodization antimony, Sb anti-reflective coating, ARC ® antisite defect APM ArF excimer laser argon, Ar Arhenius plot arsenic, As arsine, AsH3 ashing ASIC assembly ATE Atmospheric Pressure CVD, APCVD Atomic Layer Deposition, ALD Atomic Layer Epitaxy, ALE atomic number Auger electron Auger Electron Spectroscopy, AES Auger recombination, autodoping avalanche breakdown avalanche multiplication avalanche photodetector,
B
back contact Back End Of Line processes, BEOL ballistic transport ballroom cleanroom band offset band-edge lineup, bandgap bandgap engineering BARITT barrel reactor barrier height barrier metal base base punchthrough base punch-through base pushout base transport factor base width basic oxidation, batch process batch reactor BBUL packaging BCCD beam BGA BHF bias-temperature stress biaxial strain, BiCMOS binary semiconductor bipolar device bipolar transistor, BJT bird beak bit BITS blank BNDC boat Body-Centered Cubic, (BCC) cell Boltzmann constant, k Boltzmann statistics , Boltzmann transport equation bonded SOI boron boron penetration bottom antireflective coating, BARC bottom-up processing boundary layer BOX BPSG breakdown breakdown field breakdown voltage breakdown, hard breakdown, soft Bridgman growth Brillouin zone BRT brush scrubbing BST BTS buffer layer buffered oxide etch, BEO bulk CMOS bulk recombination, buried oxide, BOX burn-in
C
cadmium sulfide, CdS, cadmium telluride, CdTe, CAIBE calcium, Ca cantilever loading capacitance-voltage, C-V, measurements capping layer capture cross-section CAR Carbon Doped Oxide, CDO, carbon nanotube Caro clean carrier extraction carrier generation carrier injection CBE CD CDI CDO CEL ceramic package CERDIP CFM chain scission channel channel length channel stop channeling Charge Coupled Device, CCD charge-to-breakdown, Qbd chemical etching chemical oxide chemisorption chip chrome mask CIM class cleanroom cleaning cleanroom cleaved SOI cluster cluster, linear, cluster, radial' CMOS CMOS inverter CMP CNT cobalt silicide, CoSi2 coldwall reactor collector colloidal semiconductor, common base configuration common base current gain common base cut-off frequency common emitter configuration common emitter current gain common emitter cut-off frequency compensated semiconductor compound semiconductor conduction band conductivity conformal coating constant - current stress, CCS constant voltage stress, CVS constant-source diffusion contact angle, wetting angle contact printing contaminant contamination contamination control continuity equation Contrast Enhanced Layer, CEL COP copper interconnect copper, Cu cost of ownership, COO covalent bond CP-4 etch CPGA CPU, microprocessor Cr, chrome critical dimension, CD crosslinking cross-talk CRT cryogenic aerosol cryogenic pump cryosol spray crystal crystal defects crystal originated pits crystal pulling cubic system current crowding current gain current-voltage, I-V, measurements custom integrated circuit cut-off frequency CVD, Chemical Vapor Deposition Czochralski crystal growth, CZ
D
DAC damascene dangling bond DARC ® DBR DCFL DDE Deal - Grove model Debye length dechanneling, deep depletion deep level deep UV, DUV degenerate semiconductor deionized water, DI water density of states function density of states, denuded zone, DZ depletion depletion mode MOSFET depth of focus, DOF depth profiling design rules DESIRE desorption developer development DFT DHBT DHBT DHF diamond diamond lattice DIBL diborane, B2H6 dicing die die attachment die separation dielectric dielectric relaxation time diffusant diffused junction diffusion diffusion coefficient, D diffusion current diffusion length diffusion pump diffusion source digital device, digital integrated circuit DIMOS diode DIP direct bandgap semiconductor direct plasma direct recombination direct tunneling discrete device dislocation dispersive medium DLP®, DLT DLTS DMOS, D-MOS donor dopant dopant activation dopant de-activation dopant redistribution dopants of Silicon doping dose double (dual) gate Double-Gate Transistor downstream plasma DPSSL DQN photoresist drain drain engineering drain extension DRAM DRIE drift current drift mobility drift velocity drive in dry cleaning dry etching dry oxidation dry oxide dry pump drying DST, Depleted Substrate Transistor DSW DTMOSFET dual damascene DUV resist
E
Early effect Ebd EBDW Ebers - Moll model EBIC EBL column, ECL ECR ECR plasma edge dislocation, Edge Emitting Light Emitting Diode, EELED EEL EELS EEPROM effective mass Eg Einstein relationship elastic collision, electromigration electron electron affinity electron beam (e-beam) evaporation electron beam (e-beam) heating electron beam (e-beam) lithography, EBL electron beam (e-beam) resist electron beam, e-beam electron gas, 2-dimensional electron gun electron mobility Electron Projection Lithography, EPL electron spin, spin electron-hole pair electronic device electronic grade poly Si electro-optic effect, electroplating elemental semiconductor elementary charge, q elevated drain elevated drain elevated source ellipsometry ELO emitter emitter injection efficiency factor emitter push effect endpoint endpoint detection energy gap, forbidden band, bandgap, Eg enhancement mode MOSFET enhancement techniques EOT, equivalent oxide thickness epitaxial lateral overgrowth, ELO epitaxial layer epitaxy epitaxy by CVD EPR EPROM ESCA ESL ESR EST etch anisotropy etch mask etch selectivity etch stop etching, etch EUV, extreme UV EUVL evaporation excess carriers excimer laser exciton excitonic cells, exposure external, extrinsic gettering extrinsic semiconductor extrusion coating
F
Fabry - Perot cavity Face-Centered Cubic, FCC, cell faceting FAMOS FDMOSFET Fermi energy, Fermi level Fermi potential Fermi-Dirac distribution function ferroelectric crystal ferromagnetic semiconductors, FIB Fick's law, Fick field effect Field Effect Transistor, FET field oxide, FOX filament evaporation fill factor FinFET First 45 nm transistor fixed charge fixed charge Fixed Shape Beam, FSB flash memory flat-band voltage, VFB flip chip technology flip-chip bonding float-zone crystal growth, FZ fluorescence, fluorinated oxide fluorine in SiO2 fluorine, F2 fluorine, F2, excimer laser forbidden gap forming gas forward bias FOUP Fourier - Transform Infrared Spectroscopy, FTIR four-point probe Fowler - Nordheim tunneling, F-N FRAM free carrier Frenkel defect Frenkel pair Front End Of Line processes, FEOL FSB FSG FTPL full field full-field camera full-field exposure fully depleted SOI, FD SOI furnace furnace horizontal furnace vertical FUSI FWI
G
g - line lithography GaAs-on-Si gallium antimonide, GaSb gallium arsenide, GaAs gallium based semiconductors gallium nitride, GaN gallium phosphide, GaP gas-phase mass transfer gate gate capacitance gate contact gate dielectric gate injection gate length gate oxidation, gate oxide gate self-aligned process gate stack GC - MS, gas chromatography generation generation current generation lifetime generation-recombination current germanium, Ge gettering gettering extrinsic gettering intrinsic GILD global strain, glow discharge GOI GOI or GeOI gown gowning graded junction grain grain boundary graphene, Gummel-Poon model Gunn diode, TED Gunn effect
H
hafnium oxide, HfO2 hafnium silicate, HfSiO4 halbleiter Hall effect handotai hard bake hard breakdown HBT HDIS' HDP, High Density Plasma HDP-CVD heavily charged ion, HCI HEED helicon plasma HEMT Henry law HEPA filter heteroepitaxy hetero-integration, heterojunction HEXFET hexode etcher HFET HFL, HF-last HIGFET high angle implantation high current implantor high-frequency C-V high-k dielectric high-pressure Hg lamp HIPOX HK+MG HKMG HMDS hole hole mobility homoepitaxy homojunction homopolar bond hopping horizontal furnace hot carrier diode, hot electron hot plate hotwall reactor HPM HREM HRTEM HSQ HVAC hybrid clean hybrid IC hybrid-pi model hydrochloric acid, HCl hydrofluoric acid, HF hydrogen peroxide, H2O2 hydrogen reduction hydrogen termination hydrogenated a-Si hydrophilic surface hydrophobic surface
I
i - line lithography I/O, IO I2L IBD ICP ICP MS ideal MOS ideality factor IGBT IGFET ILD, Inter-Layer Dielectric imaging resist IMD IMEC clean immersion cleaning immersion lithography impact ionization IMPATT diode implantation damage implantation dose implantation energy implantor in situ doping in situ monitoring indirect bandgap semiconductor indirect recombination indium (In) based semiconductors inductive heating inelastic collision, infrared detector ingot InP, indium phosphide InSb, indium antimonide insulator integrated bipolar transistor integrated circuit, IC integrated device integrated processing interconnect interconnect density, interface trap internal emission interstitial interstitial diffusion intrinsic Fermi level intrinsic gettering intrinsic semiconductor inversion ion ion beam ion beam lithography, IBL ion implantation ion milling ion multicharged, MCI Ion Projection Lithography, IPL ion reflection ion single charge ion sputtering, milling ionic bond ionic conduction ionization ionization energy IPA drying IPL IR iron, Fe Irvin's curves isolation isopropyl alcohol, IPA isotropic etch ITO
J
JBS JFET junction junction depth junction, p-n
K
k Kaufman source killer defect Kirk effect KOH KrF excimer laser
L
lamp cleaning lamp heating Langmuir-Blodgett film, LASCR laser heating laser interferometry LASER, laser latch up, latchup, latch-up lateral diffusion lateral etching lateral transistor LATID lattice lattice constant , a lattice matched structure lattice mismatch LCC LCD LDD LDMOS LDMOSFET leadframe leak leak detector leakage current LEC LED, Light Emitting Diode LEED LER LET, lifetime, liftoff, lift-off, process light emmiter lighting, semiconductor lighting, lightly doped drain, LDD limited-source diffusion line defect lithography LOCOS logic circuit long-range order LOP low energy implantation low pressure oxidation low-high, l-h, junction low-k dielectric low-pressure mercury (Hg) lamp LPCVD LPD LPE LSMCD LSTP LTE LTO
M
magnetic CZ, MCZ magnetic semiconductor, magnetically confined plasma magnetron magnetron sputtering majority carriers Marangoni drying mask mask, photolithography mask, X-ray lithography maskless lithography, mass action law, mass flow controller, MFC mass spectroscopy Maxwell-Boltzmann distribution MCZ mean free path mechanical mask megasonic agitation, megasonic scrubbing megasonic cleaning memory structure, cell MEMS MEMS release mercury probe, MERIE MESA MESC port MESFET metal metal MOS gate metallic bond metallic contaminant metallization metallurgical junction metallurgical junction metal-semiconductor contact MFMISFET micrometer, micron microprocessor microwave plasma, MW plasma mil Miller indices MIM MIMIC, MMIC minienvironment minority carriers MIS MISFET mist deposition MNOS mobile charge mobility MOCVD MODFET, modulation doping, MOEMS Molecular Beam Epitaxy, MBE molecular bond molelectronics molibdenum silicide, MoSi2 monolithic IC Moore's law MOS gate, MOS, Metal Oxide Semiconductor MOSFET MOST MPGA MPS MTBF MTL MuGFET. Multi-gate FET Multichip Module, MCM multicrystalline material multilayer metallization multilayer resist multilevel interconnect, MLI multilevel metallization
N
n, refractive index NAA nanocrystal quantum dot, NQD, nanodot nanoglass nanoheteroepitaxy, NHE nanometer, nm nanoporous silica nanotechnology nanotechnology, conventional nanotechnology, new generation nanotube nanowire native oxide NBTI, negative resist negative resistance NGL, Next Generation Lithography nickel silicide, NiSi nitric oxide, NO nitridation nitrided oxide nitrogen, N2 nitrous oxide, N2O NMOSFET NO, N2O oxidation non-contact electrical characterization non-radiative recombination non-selective etching non-volatile memory normally "off" MOSFET normally "on" MOSFET NTD n-type semiconductor nucleation numerical aperture, NA
O
OBIC OEM OFET ohmic contact OLED omega gate, OMVPE ONO opaque material Open-circuit voltage OPL optical emission spectroscopy, OES optical interconnects optical lithography organic contaminant organic LED, OLED organic semiconductor organic solvent organic TFT, OTFT OSF OSQB outdiffusion overlay oxidation constants oxidation kinetics oxidation mask oxide oxide breakdown oxide etching oxide fixed charge, Qf oxide mobile charge, Qm oxide trapped charge oxygen in silicon ozonated water ozone
P
package packaging PAL parallel plate reactor Partially- Depleted SOI, PDSOI particle particle counter particle removal passivation passive element, pattern definition pattern generation, generator Pauli exclusion principle PCM, PDIP PDP PEEM pentacene permittivity of vacuum phase shift mask, PSM phase shifter, pHEMT PHEMT phonon phophorescence, phosphine, PH3 phosphorus tetrachloride, POCl3 phosphorus, P phosphosilicate glass, PSG photocurrent photocurrent Photo-CVD photodetector photodiode photoelectric effect photoemulsion photoemulsion mask photolithography, optical lithography photomask photon photonic device photoresist photoresistor photostabilization of resist phototransistor photovoltaic effect, photovoltaics, physical etching Physical Liquid Deposition. PLD Physical Vapor Deposition, PVD physisorption pi gate, PIC, piezoresistivity, Pin Grid Array, PGA p-i-n junction, PIN pinhole pionics, Piranha clean pitch planar defect planar process planar transistor planarization planarizing resist Planck constant, h plane channeling, plasma plasma anodization Plasma Enhanced Chemical Vapor Deposition, PECVD plasma etching Plasma Immersion Ion Implantation, PIII plastic ICs platinum silicide, PtSi PLCC PLED plug PMMA PMOSFET p-n junction p-n junction isolation POA POCL point defect Poisson equation polar semiconductor polishing polprzewodnik poly - Si gate poly depletion polycrystalline material, poly polycrystalline silicon, poly Si Poole - Frenkel conduction Poole-Frenkel emission POR, porous dielectric positive resist post-CMOS post-CMP cleaning post-implant anneal potential barrier POU power - delay product power device ppb ppm PRE pre-damage implants predeposition preferential etching pressure units PREVEIL process diagnostics process monitoring progressive breakdown projected range projection printing PROM protocrystalline material' proximity effect proximity printing pseudomorphic material p-type semiconductor puller Pulsed Laser Deposition, PLD, PUT PVD PZT
Q
Qbd QD LED, QFP, quad package, quantum device quantum dot quantum efficiency quantum well quartz quasi-Fermi level quasistatic C-V
R
radiant heating radiation wavelength - energy conversion radiative recombination Radio Frequency, RF, plasma raised source-drain RAM ramp voltage oxide breakdown, Ebd Rapid Thermal Processing, RTP raster scan Rayleigh equation, RBS RCA RCA-1, RCA1, RCA 1 RCA-2, RCA2, RCA 2 reactive evaporation Reactive Ion Etching, RIE reactive sputtering recombination recombination center, recombination current recombination lifetime recombination site rectifying contact redistribution refractive index, n regioregular polythiophene release process remote plasma, downstream plasma resist resist ashing resist stripping resistivity resolution resonant tunneling reticle retrograde gate retrograde well reverse bias reverse breakdown voltage, RF RGA RHEED RIBE rinsing R-metal MOS gate RMOS R-MOSFET RMS roll-off roll-to-roll process, R2R, ROM Roots pump rotagoni drying rough, roughing, pump | |
